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| savantic semiconductor product specification silicon npn power transistors BUW11 BUW11a description with to-3pn package high voltage ;high speed applications converters inverters switching regulators motor control systems pinning (see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit BUW11 850 v cbo collector-base voltage BUW11a open emitter 1000 v BUW11 400 v ceo collector-emitter voltage BUW11a open base 450 v v ebo emitter-base voltage open collector 9 v i c collector current 5 a i cm collector current-peak 10 a i b base current 2 a i bm base current-peak 4 a p t total power dissipation t c =25 100 w t j junction temperature 150 t stg storage temperature -65~150 thermal characteristics symbol parameter max unit r th j-mb thermal resistance from junction to mounting base 1.25 k/w fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors BUW11 BUW11a characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit BUW11 400 v ceo(sus) collector-emitter sustaining voltage BUW11a i c =0.1a ; i b =0; l=25mh 450 v BUW11 i c =3a; i b =0.6a v cesat collector-emitter saturation voltage BUW11a i c =2.5a; i b =0.5a 1.5 v BUW11 i c =3a; i b =0.6a v besat base-emitter saturation voltage BUW11a i c =2.5a; i b =0.5a 1.4 v i ces collector cut-off current v ce =rated v ces ; v be =0 t j =125 1.0 2.0 ma i ebo emitter cut-off current v eb =9v; i c =0 10 ma h fe-1 dc current gain i c =5ma ; v ce =5v 10 35 h fe-2 dc current gain i c =0.5a ; v ce =5v 10 35 switching times resistive load t on turn-on time 1.0 s t s storage time 4.0 s t f fall time for BUW11f i c =3a ;i b1 =-i b2 =0.6a for BUW11af i c =2.5a ;i b1 =-i b2 =0.5a 0.8 s savantic semiconductor product specification 3 silicon npn power transistors BUW11 BUW11a package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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